脉冲化学沉积非晶态Ni—P合金原子分布函数研究

采用Ｘ射线衍射分析技术，研究了脉冲化学镀非晶态Ｎｉ－Ｐ合金的原子分布和函数，得出其短程有序原子集团的尺度为０．７５４ｎｍ，约为熔体激冷法获得的非晶态Ｎｉ－Ｐ合金短程有序畴的１／２。并利用脉冲化学沉积非晶态合金的微机制择这一结果进行了解释。     

区熔单晶硅生产操作指导专家系统

本文介绍区熔单晶硅生产操作指导专家系统。首先，系统实现了连续图象的自动变周期、定瞬间采样，并提出一种新的区域扩张增量图象处理算法．其次，叙述了知识的获取过程及类规则，提出分布的多库结构，并实现了不确定性推理．最后，开发了区熔单晶硅生产操作指导专家系统，实现了从数据和图象采集、处理、事实获取、推理到给出操作指导一体化。     

多晶硅太阳电池用SiN薄膜的研究进展

SiN薄膜因为具有良好的减反射性质和钝化作用，已经越来越广泛地应用于多晶硅太阳电池的制造工艺中，介绍了SiN薄膜在硅太阳电池中的性质，制备方法等研究现状，同时提出了存在的问题并展望了今后的发展趋势。     

用于微波/射频集成电路的一种新型低损耗介质——多孔硅及氧化多孔硅厚膜

提出在单片微波集成电路(MMIC)中用多孔硅/氧化多孔硅厚膜作微波无源器件的低损耗介质膜.研究了厚度为70μm的多孔硅/氧化多孔硅厚膜在低阻硅衬底上的形成,这层厚膜增加了衬底的电阻率,减少了微波的有效介质损耗.通过测量在低阻硅衬底上形成的氧化多孔硅厚膜上的共平面波导的微波特性,证明了在低阻硅衬底上用厚膜氧化多孔硅可以提高共平面传输线(CPW)的微波特性.     

激光结晶a-Si:H SOI离子注入和快速退火

本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.     

浦项开发35W270以上牌号无取向硅钢

钢中加Sn和Sb得到优良的磁性，铁损低和磁感高。与加B的比较，晶粒大，立方织构、高斯织构、（100）[uvw]纤维体积份数很高和γ-纤维体积份数很低，增加磁感的磁各向异性和降低铁损的磁各向异性。进行常化与未经常化的比较，最终晶粒大。（100）纤维份数：热轧板的最低，冷扎后变成最高。铁损的各向异性与织构因数之间成反比，磁感的各向异性与织构因数之问成正比。开发出了35W270-250高牌号无取向硅钢。     

Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO₂ containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH₂(PMe₃)₄ (Me = CH₃) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.     

Structure modification of rapidly solidified Al-11 wt% Si alloy by the addition of 2 wt% Fe

An investigation of the structure formation of as-cast Al-11 wt% Si (AlSi11) and Al-11 wt% Si-2 wt% Fe (AlSi11Fe2) rapidly solidified (RS) ribbons is performed. Ribbon samples are examined in detail using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A nanoscale thickness layer of Si-precipitations, at both Al-grains boundary and oxide/Al-matrix interface, is found to be characteristic for “pure” AlSi11 ribbons. For Fe-doped ribbons, this layer comprises Fe-containing phase also, which appears to possess amorphous nature and is situated between the Si-grains and Al-matrix. A possible mechanism of altering the thermally activated volume diffusion of elements, due to the effect of Fe on the structure modification, is speculated based on the obtained results.     

Flash-lamp annealing of semiconductor materials—Applications and process models

Flash-lamp annealing (FLA) on a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural model to compute stresses and deflections. The paper shows how these models can be used to explore process conditions in flash lamp annealing, with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates.     

晶体硅薄膜电池制备技术及研究现状

晶体硅薄膜太阳电池近些年来得到广泛的研究和初步的商业化探索。根据所采用的晶体硅薄膜沉积工艺中温度范围的不同，晶体硅薄膜电池研究可分为高温路线和低温路线两个不同发展方向。本文分别从这两个方向综述了目前国外晶体硅薄膜电池制备技术的最新进展，最新实验室研究结果。报导了晶体硅薄膜电池商业化进展状况，指出了晶体硅薄膜电池实现产业化必须解决的问题。